Segregation coefficients and activation of indium in cadmium telluride grown from tellurium-rich melt by the Bridgman technique

Abstract

In-doped CdTe was grown from Te excess CdTe melts by the Bridgman technique. The segregation coefficient of the In atoms in the CdTe crystals was almost independent of the concentration of the In atoms and the Te atom excess with respect to the stoichiometric CdTe ratio for high In atom concentrations. The segregation coefficient was obviously dependent on the concentration of In atoms and excess Te atom concentration for low In atom concentrations. The electrical activity of the In atoms in the CdTe crystals decreased with increasing excess Te atom concentration. Degradation of the activity was caused by the solid solubility limit of the In atoms, the formation of acceptor-like complexes such as V 2− Cd −In + Cd, and the formation of undesirable compounds such as InTe, In 2Te 3 and CdIn 2Te 4.