Abstract
Using 1 - 2 keV and 1.5 - 3 keV beams, the measurement of the first layer composition of (100) at room temperature reveals a slight enrichment of Al on the surface. The enrichment of Al at room temperature also was confirmed by analysis using a 2 keV beam. It was found that Al atoms on the surface were preferentially sputtered for 1 - 2 keV and 1.5 - 3 keV beams. The surface concentration of Al increased with temperature in the range 300 - 620 K due to the combined effect of preferential sputtering, ion beam mixing and Gibbsian segregation. An equilibrium sputtering model has been developed which agrees with Al surface concentrations up to 473 K. However, at higher temperatures the surface Al concentrations are greater than those predicted by the model, indicating that the surface has not reached sputtering equilibrium.
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