Seeds-induced synthesis of SiC by microwave heating

Abstract

α-SiC particles were used as heating seeds to prepare SiC from coal minerals with microwave heating method. Coating technique was carried out to prepare composite raw powders in three different methods. Heating temperatures were at 1000 °C, 1050 °C, 1100 °C, 1150 °C, 1200 °C for 10min, respectively. XRD, SEM techniques were carried out to characterize samples. It was found that different distribution between C and α-SiC particles from different mixing method leads to different microwave heating behavior and growth mechanisms. V-V reaction leads to in situ nucleation and grain growth on the surface of α-SiC seeds which contact with C particles. Well-grown β-SiC particulates appear. Hybrid V-V reaction V-L reaction lead to local microwave plasma and diffusion-precipitation with a very thin layer of SiO2 between raw C particles and α-SiC seeds. Local fine β-SiC whiskers and particulates on the surface of α-SiC seeds co-exist. Primary V-V reaction leads to nucleation and grain growth along reacted C-SiO2 interface with very thick layer of SiO2 between raw C and α-SiC seeds. Substantial β-SiC whiskers appear. Transformation from β-SiC to α-SiC on the surface of as-formed whiskers will be enhanced by microwave plasma at high temperature.