Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Kevin Alvin Eswar,Abdul Aziz Noor Aadilla,Zuraida Khusaimi,Salman A.H Alrokayan,Saifollah Abdullah,Azlinda Aziz,Ajis Lepit,Haseeb A Khan,N.A.M Asib,Mohamad Rusop,A.N Afaah,F.S Husairi,Rosfayanti Rasmidi

doi:10.4028/www.scientific.net/amm.773-774.626

Kevin Alvin Eswar, Abdul Aziz Noor Aadilla + Show 11 more

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https://doi.org/10.4028/www.scientific.net/amm.773-774.626

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Abstract

In this work, seeded porous silicon (PSi) was used as a substrate in the growth of ZnO nanostructures. PSi was prepared by electrochemical etching method. ZnO thin films as seeded were deposited via sol-gel spin coating method. ZnO nanostructures were grown on seeded PSi using hydrothermal immersion method. In order to study the effect of post-heat treatment on the substrate, post annealing temperature were varied in the range of 300 to 700 °C. The FESEM results shows ZnO thin film composed of nanoparticles were distributed over the PSi surface. Based on AFM characterization, the smoothest surface was produced at post annealing temperature of 500 °C. There are two different peaks appeared in PL characterization. The peak in near-UV range is belonging to ZnO thin films while a broad peak in visible range can be attributed to ZnO defects and PSi surface. In addition, FESEM, XRD and PL were used to characterize the ZnO nanostructures. The FESEM results revealed ZnO nano-flower were successfully grown on seeded PSi. Hexagonal wurtzite of ZnO with dominated by the plane (100), (002), and (101) was found by XRD characterization. Two different peaks in UV range and visible range can be attributed to ZnO nano-flower and various defects of ZnO, respectively.

Highlights

Special characteristic of a wide band gap of 3.37 eV and a large binding energy of 60 meV make ZnO semiconductor become a potential material in optoelectronic device applications
The ZnO nanostructures were grown on seeded porous silicon (PSi) via hydrothermal immersion method
ZnO nanostructures were grown on the selected seeded PSi substrate via hydrothermal immersion method

Summary

Introduction

Special characteristic of a wide band gap of 3.37 eV and a large binding energy of 60 meV make ZnO semiconductor become a potential material in optoelectronic device applications. Kim et al have proposed that the photoluminescence (PL) properties of ZnO nanostructures grown on PSi can be applied to white. Several methods have been used to produce ZnO nanostructures including radio frequency (RF) magnetron sputtering, pulsed laser deposition, chemical vapour deposition, atomic layer deposition, sol-gel deposition and hydrothermal immersion deposition [410]. The ZnO nanostructures were grown on seeded PSi via hydrothermal immersion method. ZnO nanostructures were grown on the selected seeded PSi substrate via hydrothermal immersion method.

Result and discussion

Conclusion