Seeded Growth of GaN Single Crystals by Na Flux Method Using Na Vapor

Abstract

The seeded growth of GaN single crystals was performed at 780 °C and a N2 pressure of 5 MPa by the Na flux method using Na vapor. Transparent crystals were grown on prismatic GaN seed crystals in a Na–Ga melt. The thickness of the crystals grown on the seeds by heating for 400 h was approximately 150 µm in the directions perpendicular to the prismatic and pyramidal planes, implying a growth rate of at least 0.4 µm/h.