Abstract
Metal Mn was introduced into Li3N flux to grow GaN single crystals from Ga melt. Colorless, transparent GaN single crystals with an average size of 2−3 mm were obtained at 800 °C under N2 pressure of about 2 atm. The effects of Mn on the quality, size distribution, morphologies, and formation mechanism of GaN crystals were investigated. It was found that the proper addition of Mn favored GaN growth, impeded the homogeneous nucleation to some extent, and resulted in a more uniform size distribution and high quality of GaN crystals as compared with that of GaN grown using Li3N as flux only. The formation mechanism was enhanced by Mn addition. These results suggested a promising new route for the growth of large size and high quality GaN single crystals from a Li−Ga−N system in the future by optimizing the molar ratio of Mn to Li3N.
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