Abstract
We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybutyl selenide (DtBSe) precursor line pressure from 0 to 0.4 Torr, leading to an increase of the carrier density in the transistor channel of more than two orders of magnitude. By keeping the DtBSe line pressure at 0.1 Torr, the carrier density in the nanowire channel measures ≈ 5 × 1017 cm-3 ensuring the best peak transconductances (> 100 mS/m) together with very low resistivity values (70 Ω × μm) and capacitances in the attofarad range. These results are particularly relevant for further optimization of the nanowire-FET terahertz detectors recently demonstrated.PACS: 73.63.-b, 81.07.Gf, 85.35.-p
Highlights
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration in device families such as light emitting diodes, field effect transistors (FET), high-efficiency photovoltaics, or highresponsivity photodetectors [1,2,3]
The most significant difference is related with the evidence that in nanowire growth, the surfaces of already grown segments are exposed to impurities for the duration of the growth, which can affect the physical and chemical properties of such segments
In a ‘bottom-up’ vision, semiconductor nanowires can be considered as peculiar ‘building blocks’, synthesizable as an active element for high performance electronic devices, whose specific characteristics are highly dependent on the nanowire physical properties
Summary
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration in device families such as light emitting diodes, field effect transistors (FET), high-efficiency photovoltaics, or highresponsivity photodetectors [1,2,3]. Semiconductor nanowires are conventionally grown from metallic seed particles, meaning that the mechanisms for impurity incorporation are different from those of other growth techniques [4]. In a ‘bottom-up’ vision, semiconductor nanowires can be considered as peculiar ‘building blocks’, synthesizable as an active element for high performance electronic devices, whose specific characteristics are highly dependent on the nanowire physical properties. In this perspective, InAs can be identified as one of the most successful candidates for such nanoscale integration. InAs nanowires can be grown epitaxially on silicon without the use of gold seeding [6], making the process viable for low-cost silicon technology integration where deep Au levels in the Si bandgap must be avoided
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