Abstract

Summary form only given. Photonic crystals (PC) and microcavities (MC) are in the focus of the basic interest of both fundamental and applied research. One of the issue is the development of techniques sensitive to photonic properties of PC and MC such as the giant optical dispersion and localization of radiation. In this direction nonlinear-optical methods are very attractive being sensitive to inner properties of PC in comparison with linear spectroscopy. The second-harmonic generation (SHG) stands out as a versatile and sensitive probe of PC and MC grown from centrosymmetric materials. In this paper the combined second-harmonic (SH) intensity and phase spectroscopy is proposed as a direct probe of localization of the light inside porous silicon PC and MC. The choice of microstructures based on porous silicon is attributed with their great practical importance since the all-silicon electrochemical technique of the growth of such structures could be easily incorporated in the silicon technology.

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