Abstract
Coincidence counting in highly charged ion based secondary ion mass spectroscopy has been applied to the characterization of selective tungsten deposition via disilane reduction of tungsten hexafluoride on a patterned SiO2/Si wafer. The high secondary ion yield and the secondary ion emission from a small area produced by highly charged ions make the coincidence technique very powerful.
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More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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