Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide

Abstract

The secondary defect annihilation titanium silicidation in SixGe1−x layers, formed by high dose Ge implantation in (100) silicon, has been studied systematically as a function of the Ge fluence, implantation energy, and TiSi2 thickness. Rutherford backscattering spectrometry and transmission electron microscopy have been used to investigate the damaged SixGe1−x layer recovery and to monitor the germanium diffusion and reaction during the silicidation. For the highest fluence of 3×1016 Ge/cm2 (≊15 at. % Ge) it is found that nearly a complete annihilation of the secondary defects can be achieved after the first low-temperature silicidation step. After a second high-temperature silicidation step all residual defects have been removed. For fluences lower than 3×1016 Ge/cm2 a complete recovery is already obtained after the first silicidation step.