Abstract
We present observations of optical second-harmonic generation (SHG) from dense (1010 or 6×1011 cm−2) layers of 5 or 8 nm average diameter silicon nanocrystals (NCs) embedded in thin (6–15 nm) SiO2 films on silicon substrates. Time-dependent SHG monitors optically-driven electrostatic charging of the Si NC layer as well as subsequent charge leakage, and thus provides noncontact electrical characterization of Si-NC-based device structures. SHG intensity and phase spectra of Si NCs are distinguished from contributions of the Si substrate by polarization-dependent and frequency-domain interferometric SH spectroscopy, which reveal a NC-size-dependent blueshift of the E1 resonance consistent with quantum confinement.
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