Abstract

Second harmonic generation from n-GaAs(1 0 0) electrodes in sulfuric acid solution has been investigated at an incident wavelength of 1064 nm over a potential range where Faradaic processes are excluded. In the p-in/p-out polarization configuration, the rotational anisotropy in the nonlinear response was found to depend both on the doping level and the applied potential. The effects of the applied potential on the isotropic amplitude of the SHG signal turned out to be closely related to the population of surface states as revealed by impedance spectroscopy, indicating that these states could play a significant role in second harmonic generation.

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