Abstract
This chapter focuses on the possible nature of the surface states responsible for the Fermi level pinning on the n-GaAs(110) electrodes in an electrochemical environment, on the basis of the information provided by electrochemical impedance spectroscopy and in situ spectroscopic ellipsometry studies. For this, investigations were performed on Si-doped GaAs(110) electrodes, prepared from single crystals grown in a Cambridge Instruments MSR-6 pulling machine by Cz-LEC procedure from highly pure components. The as-polished GaAs(110) electrodes were etched in (3:1:1) H2SO4:H2O2:H2O followed by HCl wash and water rinsing before being placed in the measuring cell. The measurements were performed under potentiostatic conditions in well-deaerated 1N H2SO4 solution in a potential range where no Faradaic processes can take place. Mott-Schottky plots and potential-dependent second harmonic generation (SHG) measurements revealed the mid-gap Fermi level pinning at n-GaAs(110) electrodes / solution interface. Information provided by electrochemical impedance spectroscopy (EIS) and in situ spectroscopic ellipsometry (SE) studies point to the surface/interface states associated to missing arsenic or GaAs-antisite defects for being possibly responsible for the Fermi level pinning in an electrochemical environment.
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