Abstract
This chapter presents a study in which the semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH=8.4) and a 0.1 M H2SO4 solution are examined by using photoelectrochemical response and electrochemical impedance spectroscopy, to reveal the difference in electronic structure of the passive films formed in them. A n-type semiconductor behavior is observed by both photo current and impedance for the passive films formed in the borate buffer solution. However, a negative photocurrent is observed in the 0.1 M H2SO4 solution, which indicates that the passive film formed in acid behaves as a p-type semiconductor. However, Mott-Schottky plot of the capacitance shows a typical n-type semiconductor property. It is concluded that the passive films on the Fe-18Cr alloys formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other hand, passive film on Fe-18Cr alloy in 0.1 M H2SO4 solution consists of p-type oxide and n-type hydroxide layers with isotype heterojunction.
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