Abstract
Ultracold muonium (UCMu) is an important muonium (Mu) source for the generation of ultraslow muon beam for nanotechnological applications and understanding hydrogen dynamics in materials. In order to search for a new solid material for the generation of UCMu in vacuum, we have studied polycrystalline SiC using conventional muon spin rotation and relaxation method at low temperatures (5 K – 300 K). The high relaxation rates of Mu formed deep inside from the surface (full-stop case) and near the rear surface (half-stop case) were observed at low transverse field (TF 1.2 G). The relaxation rates of Mu at different temperatures in full-stop and half-stop cases were found to be the same within error-bars indicating the less possibility of emission of the UCMu from the surface of the SiC. We plan further study in KCl, porous silica, and chevron shaped electron rich microporuos materials.
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