Abstract
Cu/SiO2 diffusion at hybrid bonding interface without diffusion barrier was investigated in order to validate the electrical insulation of interconnects. The Cu thermal diffusion was studied by ToF-SIMS analysis of the dielectrics stack facing bonding pads after a bonding annealing (400 °C, 2 h) and a diffusion annealing (400 °C, 14 h). No trace of copper was found above the limit of detection 1017 at·cm−3. Cu ions drift was followed by I-V measurements on specially designed comb-serpentine that maximize the electrical field at bonding interface. Their efficiency was confirmed since physical failure analysis located the dielectric breakdown damage between bonding pads. Breakdown voltages coupled to wafer-to-wafer misalignments enabled the extraction of the SiO2 breakdown strength: 3.4 MV·cm−1. This study proves that at room temperature, hybrid bonding interconnects remain electrically insulated despite thermal budgets involved by the bonding process.
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