Abstract
Nanoimprint lithography (NIL) is a simple process to fabricate nanostructure devices with high throughput and low cost. The mold fabrication process is an important factor to improve NIL technology. Adopting a seamless pattern mold fabrication process is expected to enhance throughput. In this study, we developed a seamless long line and space (L and S) pattern fabrication process by using an electron beam (EB) stepper. As a result, a seamless 200nm line and 300nm space pattern (120mm long and 10mm wide) was exposed on a 6in. Si wafer. We also carried out thermal nanoimprinting using the seamless L and S pattern mold fabricated by using the EB stepper. We confirmed that the seamless L and S pattern was clearly imprinted on the resin.
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