Abstract

This paper presents a novel silicon controlled rectifier (SCR)-based ESD protection device with a low trigger voltage and high robustness for I/O clamp. The low trigger voltage is achieved by injecting the trigger current into main SCR. We measured the I-V characteristics, leakage current analysis and ESD robustness characteristics. The proposed ESD protection circuit was validated using a transmission line pulse (TLP) system. From the experimental results, the proposed ESD protection device has a lower trigger voltage of 5.6V. Also, the robustness has measured to human body model (HBM) 8kV and machine model (MM) 600V. The proposed ESD protection device is designed in 0.35um Bipolar-CMOS-DMOS (BCD) technologies.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.