Abstract
Si nanodots (NDs) were produced in a silicon-rich dielectric matrix by plasma-enhanced chemical vapor deposition. After rapid thermal annealing at 900°C, the Si NDs have a mean diameter of 3 nm and a sheet density of ∼10 11/cm 2, as determined by the transmission electron microscopy. The photoluminescence (PL) spectrum is red-shifted after the annealing. The electroluminescence spectrum from Al/Si NDs embedded silicon nitride/ Si device structure was investigated. The spectrum was spread from 400 to 750 nm and is blue-shifted as compared to the PL spectrum. The device electrical characteristics, with as-deposited and annealed Si NDs embedded in the silicon nitride layer, were investigated at room temperature. The current transport was found to be strongly correlated to the Si NDs. The annealed Si NDs have lower energy states, which are consistent with the shift of the PL spectrum.
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