Abstract
Schottky barriers have been analyzed theoretically for clean and passivated GaAs(110)-surfaces. Passivation is obtained by the deposition of an As-monolayer on the semiconductor surface. The Schottky-barrier formation is studied for a K-monolayer on the clean and passivated semiconductor surfaces. Our results show that passivation changes dramatically the mechanism of Schottky-barrier formation. These differences are explained by the different states found for the ideal and passivated surfaces. In particular we find that the As-passivation decreases the n-type Schottky barrier for K by 0.6 eV.
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