Abstract
Schottky-barrier heights can be modified by passivation of semiconductor surfaces and the resulting change in the metal-semiconductor interaction. We present theoretical calculations for two different semiconductors: Si and GaAs passivated with Sb. Passivation of GaAs(110) surfaces introduces ohmic contacts, while Si(111) presents smaller changes in its barrier height. These results are similar to the ones previously found for the same semiconductor surfaces passivated with H.
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