Abstract
Schottky-barrier heights can be modified by passivation of semiconductor surfaces and the resulting change in the metal-semiconductor interaction. We present theoretical calculations for two different semiconductors: Si and GaAs passivated with Sb. Passivation of GaAs(110) surfaces introduces ohmic contacts, while Si(111) presents smaller changes in its barrier height. These results are similar to the ones previously found for the same semiconductor surfaces passivated with H.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
