Abstract
In this letter, sol-gel-processed SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films were deposited, with thicknesses varying from 3.5 to 5.0 nm, by controlling the concentration of the precursor solutions. Through electrical and spectroscopic investigations, it was found that the optical energy bandgap and the electron affinity were affected by the quantum confinement effect and Burstein-Moss effect. Moreover, the increased barrier height between Au and SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> semiconductors was enhanced when thinner SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers were used, resulting in strong Schottky diode characteristics. This letter allows one to examine the size scaling effects of ultrathin electrical devices with SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> channel layers. In addition, a generalized energy band diagram derived from the bandgap broadening in ultrathin SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> semiconductors is presented, which will allow the elucidation of the carrier transport mechanism and optical properties of quantum confined SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> semiconductor-based optical and electrical devices.
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