Abstract

Over the recent years, the global increase of electronic wastes from electrical and electronic devices (e-wastes) has been on an alarming trend in quantity and toxicity and e-wastes are non-biodegradable resulting in its cumulative increase over time. Changes in technology and unrestricted regional movement of electrical devices have facilitated the generation of more e-wastes leading to high levels of air, soil and water pollution. To address these challenges, biodegradable organic components such as chitosan have been used to replace their inorganic counterparts for optoelectronic device applications. However, in-depth knowledge on how such materials can be used to tune the optical properties of their hybrid semiconductors is unrivaled. Thus, systematic studies of the interplay between the preparation methods and optical band gap and Urbach energy of such organic components are vital. This study has thus been dedicated to map out the effect of acid concentrations during chitosan extraction on the corresponding optical band gap and Urbach energy with a view to improving its applications in optoelectronic devices. The, 1.0 to 2.5 molar hydrochloric acid (HCl) was used for 12 hours at room temperature during demineralization and 2.0 molar sodium hydroxide (NaOH) during deprotonation processes. The absorbance spectrum of the samples was collected by UV-Vis spectrophotometer and band gap energies were analyzed by performing Tauc’s plot. This study revealed that the energy band gap of chitosan extracted from 1 M HCl, 1.5 M HCl, 2.0 M HCl and 2.5 M HCl were 3.72 eV, 3.50 eV, 3.45 eV and 3.36 eV respectively. Furthermore, the Urbach energy of chitosan extracted from 1 M HCl, 1.5 M HCl, 2.0 M HCl and 2.5 M HCl were 0.60496 eV, 0.5292 eV, 4724 eV and 0.2257 eV, respectively.

Highlights

  • The current global availability of millions of electrical and electronic devices has led to a new environmental pollution of electrical and electronic equipment or devices which are beyond their lifespan (e-wastes) [1]

  • This study revealed that the energy band gap of chitosan extracted from 1 M hydrochloric acid (HCl), 1.5 M HCl, 2.0 M HCl and 2.5 M HCl were 3.72 eV, 3.50 eV, 3.45 eV and 3.36 eV respectively

  • Previous studies have revealed that the Urbach energy (Eu) of chitosan has shown a remarkable increase from 1.11 eV to about 2.22 eV with increasing acid concentrations and this determines the electronic disorder which further affects the degree of disorder in the chitosan sample

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Summary

Introduction

The current global availability of millions of electrical and electronic devices has led to a new environmental pollution of electrical and electronic equipment or devices which are beyond their lifespan (e-wastes) [1]. Chitosan has been extensively used to fabricate a variety of chitosan/metal oxide composites such as Chitosan/Zinc Oxide, Chitosan/Tin Oxide and Chitosan/Graphene oxide This has been done with the view to replace the inorganic semiconductors used in fabricating electronic devices to aid in controlling e-waste pollution. Applications of chitosan in more advanced electronic devices which have high voltage operation, high temperature tolerance and high switching frequencies have not yet reached the expected standards [8] This could be attributed to the fact that the optoelectronic properties of chitosan have not been extensively exploited. The absorption coefficient (α) can be used to calculate the optical energy band gap; Eg by performing Tauc’s plot [10] related by the equation ( ) = αhv r. The Eu can be calculated from the absorption spectrum using the relation;

Atego et al DOI
Materials and Equipment
Preparation of Chitosan
Effect of Acid Concentration on Absorbance Spectrum of Chitosan
The Effect of Acid Concentration on Urbach Energy Eu of Chitosan
Conclusion
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