Abstract
In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.
Highlights
For smart memory cards and portable electrical device applications, many nonvolatile memory devices such as the ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM) and phrase change memory (PCM) are widely discussed [1,2,3,4,5,6,7,8]
2 thin films was fabricated by virtue of the inertia of the
Material and Methods device fabrication process, the Gd:SiO2 thin films deposited on the TiN/SiO2/Si substrate were prepared by co-sputtering pure 2silicon dioxide and gadolinium targets
Summary
For smart memory cards and portable electrical device applications, many nonvolatile memory devices such as the ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM) and phrase change memory (PCM) are widely discussed [1,2,3,4,5,6,7,8]. Because of the integrated circuit (IC) compatibility processes, high operation speed, long retention time, low operation voltage, non-destructive readout and simple metal-insulator-metal-metal (MIM) structure, the various metals doped into silicon-based oxide thin films are widely discussed for applications in resistive random access memory (RRAM) devices [9,10,11,12,13]. Typical resistive switching memory materials for metal doped into silicon-based oxide, complex metal oxide and functional materials thin films were selected and considered. The hopping conduction distance, Materials 2018, 11, 43; doi:10.3390/ma11010043 www.mdpi.com/journal/materials activation energy and barrier height of the important electrical conduction mechanism of bipolar resistive switching. To further discuss the bipolar switching properties of gadolinium-doped. SiO2 thin films resistive switching RRAM devices were not widely investigated and discussed [14,15].
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