Abstract
Schottky barrier diodes have been made by evaporating semitransparent filmsof various metals (Ag, Au, Sc, Sm, Y, Yb) onto p-type hydrogenated amorphous silicon (a-Si:H) prepared by the glow discharge decomposition of SiH 4−B 2H 6 mixtures. Good diode characteristics have been obtained with low work function metals such as Y and Yb. Barrier heights φ b are close to 1 eV and diode quality factors n ∼ 1.3. The photo-response of these diodes has been measured and analysed to determine the μτ-product of the minority carriers (electrons). We find μτ ≈ 10 −9 cm 2/V which is very similar to the μτ-product of holes in comparable Schottky barrier diodes of n-type a-Si:H.
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