Abstract
Photoemission studies using synchrotron radiation and line sources have been performed to study the Schottky barrier formation of Cu and Au on the layered type semiconductors MoS 2 and WSe 2. In addition to the van der Waals planes an edge plane, which contains the crystal c-axis, was prepared by cutting thicker crystals (1–2 mm) in UHV. The double doublet structures observed in the core level spectra of the cut crystals are interpreted as two electronically different states. In contrast to the van der Waals planes the edge planes show Fermi level pinning and also an increased reactivity. The change in Fermi level position during metal deposition is different for the cleaved and cut surfaces, indicating that different mechanisms are involved.
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