Abstract
A new method to determine the potential profile at a blocking contact to an insulator is presented. We apply this method to a-silicon alloys sandwiched between a metal blocking contact and an injecting contact. The field distribution was found to be approximately Ei(x) = E0 exp (βx), where E0≃1.3×105 V/cm and β−1≃500 Å. The collection width for solar–cell devices is estimated to be approximately 2800 Å. These results agree with previous predictions [M. Shur, W. Czubatyj, and A. Madan, Sol. Energy Mater. 2, 349 (1980)].
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