Abstract
Epitaxial Al contacts on Si(111) are fabricated by electron beam evaporation at various substrate temperatures around 250 °C. They are observed by high-resolution transmission electron microscopy. Schottky barrier heights (SBHs) of the contacts are measured using current-voltage and capacitance-voltage methods. In the case of single-crystalline Al film, the SBH does not change and its spatial distribution remains homogeneous up to an annealing temperature of 550 °C. In contrast with this, for an epitaxial Al film containing grain boundaries, the spatial distribution of the SBH becomes inhomogeneous above 400 °C. This is attributed to Si diffusion along the grain boundaries in the Al film.
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