Abstract
We demonstrate that electron-beam induced voltage (EBIV) technique can be used for direct measurement of Schottky (or p-n junction) barrier height. Schottky barrier heights of PtSi, Pd2Si, and TiSi2 on n-type (111) Si measured by this technique were found to be 0.84, 0.74, and 0.57 eV, respectively, in excellent agreement with values obtained by the standard current-voltage technique. Because of no complication due to leakage current in EBIV measurement, this technique is particularly suited for studying the formation of low barrier height Schottky diodes. Furthermore, this technique can be extended for in situ measurements of barrier height to supplement surface electron spectroscopy studies on the electrical and chemical characteristics of silicide/Si interfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
