Abstract
The problematics of contacts optimization on Germanium MOSFETs suffers from a gap between fundamental studies and the structures obtained after full processing. The contact properties of metals such as Ti on Ge were so far mostly investigated on weakly n-doped samples under pure Thermionic Emission (TE) regime. In this paper, we detail Schottky Barrier Height (SBH) extractions based on contact resistance (Rco) measurements on highly n- and p-doped Ge, where the predominant tunnel current component results in ohmic behavior. We applied this methodology to our fully-processed GeOI samples with Ti-based contacts, yielding effective barriers of 0.32eV for electrons and 0.15eV for holes. The method provides a good physical understanding of the technological factors impacting their electrical properties, therefore enabling to define paths towards ohmic contact optimization in the context of device integration on GeOI.
Published Version
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