Abstract
The barrier height of Au–Si Schottky diodes has been controlled by using knocked-on atoms in implantation through As and Sb films on Si. Optimum conditions to minimize degradation of the diode characteristics due to the implanted ions have been experimentally discussed and two conditions of implantation by Si ions and annealing at 900°C were adopted. Decrease of the barrier height by 0.17 eV was observed in implantation of 100 keV Si through the Sb–As film at a dose of 3×1013 cm-2. However, the C–V characteristics of the diode suggest that a fairly large amount of electrically active impurities do not effectively contribute to the decrease of the barrier height.
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