Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs

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Because of a large surface state density, which effectively pins the Fermi level at the surface, metals with vastly different work functions and chemistry produce very similar Schottky barriers when deposited on GaAs. We have investigated the effects of an (NH4)2S surface treatment on the formation of Schottky barriers on n- and p-type GaAs. Samples which have undergone the (NH4)2S treatment show a reduced pinning of the Fermi level at the surface and hence Schottky barriers which are more sensitive to the metal work function.