Abstract
Ballistic electron emission microscopy (BEEM) was performed to obtain current versus bias characteristics of nonepitaxial nanometer-thick Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data were averaged from thousands of spectra for various Au film thicknesses and then used to determine the attenuation length of the energetic charge carriers as a function of tip bias. The authors report an increase in attenuation length at biases near the Schottky barrier, providing evidence for the existence of coherent BEEM currents in Schottky diodes. These results provide additional evidence for the conservation of the parallel momentum of charge carriers at the metal–semiconductor interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
