Abstract
We investigated interface and electrical properties of Ge-based Schottky and tunnel diodes with crystalline MgO barriers. Following a simple cleaning procedure not requiring a high-temperature anneal, x-ray data indicated smooth interfaces and that the MgO tunnel barrier was highly textured. Transport characteristics were fitted using a self-consistent field Simmons–Schottky current-voltage model, yielding the Schottky and tunnel barrier heights for the devices and the distribution of tunneling currents. Considering the Fermi-level depinning and the ratio of Schottky to tunneling currents for each barrier thickness, we find that a MgO thickness of 15 Å yields the best transport properties in this system.
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