Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures

Abstract

We have prepared a large number of high mobility two-dimensional electron gas (2DEG) structures, with undoped spacer thicknesses ranging from 9 to 3200Å. For samples with 400Å of (Al, Ga)As Si-doped at 1.3×10 18 cm −3, there is a peak in the 4K mobility at spacers of 400–800Å, with a maximum value of 2×10 6 cm 2 V −1 s −1. Increasing the thickness of the doped (Al, Ga)As to 500Å produced an increase in mobility to 3×10 6 cm 2 V −1 s −1 for a 400Å space sample. We have compared these results with published analyses of scattering processes in 2DEG structures, and conclude that a combination of ionised impurity and acoustic phonon scattering gives a qualitative explanation of the behaviour, but that the experimental mobility values are generally higher than those predicted theoretically.