Abstract
The main lines in the development of wireless communication technologies are their microminiaturization, expanding the functionality of their built-in devices, and fastening the data exchange between the components of radio engineering complexes. In this case, one of the relevant issues is the development of frequency-selective devices operating in the microwave frequency range. A promising line for the creation of such devices is their integrated design based on a volumetric strip-slot transition. This article presents theoretical and experimental research of the s-parameters of the volumetric strip-slot transition. The frequency-selective properties of the volumetric strip-slot transition were estimated based on the obtained dependences of the s-parameters. The theoretical results were obtained by creating a matrix mathematical model, by designing an equivalent circuit in a circuit-simulation program, and by the numerical simulation based on solving a boundary value problem in a strict diffraction statement, using direct numerical methods. The experimental results were obtained using a sample of the volumetric strip-slot transition. The presented results of the three types of simulation and the experimental results are in good numerical relation to each other.
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