Scattering and Absorption of Ballistic Phonons by the Electron Inversion Layer in Silicon: Theory and Experiment

Abstract

This paper is a brief review of our investigations[1,2,3] using ballistic phonons to probe the two-dimensional electron gas (2DEG) in the inversion layer of Si. Our goal in the beginning was to elucidate the nature of the electron-phonon interaction for a 2DEG, an important problem physically just as in 3D but one rather less amenable to the conventional experimental procedures. In fact, in the absence of substantive results suspicions have arisen (mostly from interpretation of electrical transport) that the electron-phonon coupling in 2D might be anomalously strong compared to 3D[4]. Our ballistic phonon experiments are able to answer unequivocally that this is not the case.KeywordsInversion LayerTransverse AcousticLinear Response FunctionBallistic PhononTransverse Acoustic ModeThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.