Abstract
The atomic and electronic structure of the Pb-induced (√3 × √3)R30 mosaic phase on Si(111) substrates has been studied by means of scanning tunneling microscopy (STM). A systematic voltage dependent STM imaging analysis combined with scanning tunneling spectroscopy measurements have enabled us to interpret the different height contrast between Si and Pb adatoms observed on STM images. This contrast difference may be attributed to a large charge-transfer between the different adatom dangling-bond orbitals.
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