Abstract
Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular nanoscale domains were observed on the SiNW surface, which were attributed to boron-induced surface reconstruction. STS measurements have provided current–voltage curves for SiNWs, which showed clearly enhancement in electrical conductivity by boron doping.
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