Abstract
Scanning tunneling microscopy studies have been performed on GaAs(001) homoepitaxial films. By quenching the growth, we are able to image the surface as it appeared during deposition. Images from the early stage of growth show that the morphology oscillates between one with two-dimensional islands and flat terraces. It is noted that there is a correspondence between the surface step density and reflection high-energy electron diffraction specular intensity. In addition, depending upon the buffer layer preparation prior to the desired growth there is a significant difference in the surface morphology. Two processing methods are presented that produce recovered surfaces with either a high or low step density. Possible mechanism will be discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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