Abstract
The atomic structures of the step edge and the etch pit on a NH4F-treated Si(111) surface were studied by ultra high vacuum (UHV) scanning tunneling microscopy (STM) observation, by Fourier transform infrared (FT-IR) absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) measurements. An atomic image of the area near the step edge on the surface of hydrogen terminated 1×1 Si(111) prepared by NH4F treatment was obtained using STM taking care to avoid organic contamination on the observed sample surface. Hydrogen atoms terminating the topmost Si atoms on the terrace were observed to be closely packed with a threefold symmetry. Various size pits with triangular shape were observed on the terrace aligned with one vertex pointing to the [112] direction. The existence of one-atom size etch pits was also confirmed. The step edge was confirmed to contain some kinks. We observed a hydrogen atom of the Si-H bond projecting in an oblique direction from the endmost Si atom at the step edge.
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