Abstract
The surface morphology of Ar+-ion-bombarded Si(001) surfaces and its regrowth processes during thermal annealing are studied “in situ” using a scanning tunneling microscope (STM). The amorphous layer consists of grains 0.63∼1.6 nm in diameter. The grains gradually coalesce and forms clusters 2∼3.6 nm in diameter at the annealing temperature of 245°C. The (2×1) and (1×2) reconstructed regions surrounded by amorphous regions are partially observed on the surface after prolonged annealing, which suggests the onset of solid phase epitaxy (SPE). Real-time observation reveals that the smoothing of the surface occurs layer by layer. As the annealing temperature is raised to 445°C, the amorphous layer epitaxially crystallizes up to the topmost surface, and the (2×1) reconstructed surface with monatomic-height steps is observed.
Published Version
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