Abstract
In view of the special importance of the IV(103)- (1× 1)–III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1× 1)–In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.
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