Abstract
In view of the special importance of the IV(103)- (1× 1)–III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1× 1)–In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
