Abstract
We have measured Si(111)7 × 7 using scanning tunneling microscopy and spectroscopy. Information on the local density of states in the energy range between 2 eV below and 2 eV above the Fermi level was obtained by applying either a positive or a negative sample bias voltage U0 for stabilization of the tip position and determination of the tunneling current I(U, d) as a function of U. The interrelation between topographic and spectroscopic information and the influence of the transmission probability on the tunneling current are discussed. We demonstrate that the data obtained at positive and negative stabilization voltage are completely consistent with one another. Finally, the occurrence of defects and their relation to the atomically resolved tunneling current is analysed in detail.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call