Scanning Spreading Resistance Microscopy for Doping Profile in Saddle-Fin Devices

Abstract

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) are used to investigate the doping profile of saddle-fin (S-fin) devices in a 30-nm dynamic-random-access-memory (DRAM) technology. Due to the limited resolution of SCM, SCM cannot provide a clear doping profile of an S-fin array device. In the meantime, SSRM and focused ion beam milling during sample preparation provide an opportunity to obtain a 2-D and scanning line doping profile. The common-source region between two adjacent buried word lines is treated with an additional phosphorus (P) implantation with energy and dosage modification to have a doping profile modification in the array devices of DRAM product. With condition of the medium energy and high dosage in this additional P implantation, the row hammer effect of 30-nm DRAM could be minimized by the localized shielding effect from the electric field by a depletion effect. The junction profile of the additional P implantation is about 10 nm deeper than that of the control sample, as verified by SSRM and technology computer-aided design simulation. The experimental results of the doping profile can be used to support a mechanism of improvement of row hammer. The SSRM methodology proposed in this study could be used to optimize the doping profiles in DRAMs for future scaling technology.