Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure

Abstract

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) of a SiC multiple-pn-junction structure are presented. The structure was grown by atmospheric-pressure chemical vapor deposition using silane, propane and hydrogen. Nitrogen and diborane were used for n- and p-type doping gases, respectively. The SCM and SSRM results are compared with those of secondary ion mass spectrometry (SIMS). The 0.2-µm-thick n-type layer and 0.3-µm-thick p-type layer with a doping level of 1.5 ×1017 cm-3 in the multiple pn-junction were clearly resolved by both SCM and SSRM as well as SIMS.