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Abstract
The objective of the study is a growth of SiC/(SiC) 1− x (AlN) x structures by fast sublimation epitaxy of the polycrystalline source of (SiC) 1− x (AlN) x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Highlights
Wide-band-gap III-nitrides are undoubtedly a remarkable family of semiconductors
The objective of the study is a growth of Silicon carbide (SiC)/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy
The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution
Summary
Wide-band-gap III-nitrides are undoubtedly a remarkable family of semiconductors. Unlike their semiconductor commonly used glasses and metals [10, 11]. Silicon carbide (SiC) and aluminum nitride (AlN) are recognized as excellent materials for optical systems of extreme conditions of exploitation and have attracted increasing interest for microelectronics and optoelectronics [6, 7] Another strength of AlN is that it is the most promising universal substrate for epitaxy of a wide variety of nitride devices, including LEDs, lasers, RF and surface acoustic wave (SAW) devices. Compositions of SiC-AlN system differ from the other traditional semiconductor material by stability of properties [15, 16] For these reasons the investigation of formation mechanisms of wide-band-gap semiconductor solid solutions on the basis of SiC, and study of electrical, optical and mechanical properties, structure and morphology in dependence of obtaining conditions, are of larger demand.
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