Abstract
The direct patterning of molecular resist materials using scanning probes as local nano-toolbox represents an interesting alternative to radiation-based lithography circumventing proximity effects and development-related problems. Here, we demonstrate the development-less patterning of 10-40nm thick, spin-coated C-Methylcalix[4]resorcinarene molecular resist in a positive-tone. The lithography was performed with a modified STM operated in constant-current Fowler-Nordheim regime at ambient conditions. Thereby, wide process latitude from sub-10nm up to the @mm-size was achieved by variation of the line dose and bias voltage. The reproducible and reliable tip-based patterning of calixarene has also been demonstrated on Silicon substrates with low electron line dose values of 10nC/cm corresponding to 40pA set-point and [email protected]/s tip speed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.