Abstract
The direct patterning of molecular resist materials using scanning probes as local nano-toolbox represents an interesting alternative to radiation-based lithography circumventing proximity effects and development-related problems. Here, we demonstrate the development-less patterning of 10-40nm thick, spin-coated C-Methylcalix[4]resorcinarene molecular resist in a positive-tone. The lithography was performed with a modified STM operated in constant-current Fowler-Nordheim regime at ambient conditions. Thereby, wide process latitude from sub-10nm up to the @mm-size was achieved by variation of the line dose and bias voltage. The reproducible and reliable tip-based patterning of calixarene has also been demonstrated on Silicon substrates with low electron line dose values of 10nC/cm corresponding to 40pA set-point and [email protected]/s tip speed.
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