Scanning photodielectric spectroscopy of CdZnTe crystals under additional non-monochromatic illumination

Abstract

By means of the Scanning Photodielectric Spectroscopy (SPDS) method, the energy spectrum of charge carriers’ localized states was acquired for Cd1-xZnxTe crystals (x = 0.08–0.15) grown from the melt. In the implementation of SPDS, an additional excitation of a crystal by non-monochromatic light was used for the first time, and the parameter ‘spectral density of a section of the photodielectric effect diagram’ was introduced. This parameter is closely related to the occupation of localized states of charge carriers. It is found that under additional photoexcitation, the energy spectrum of the localized states detectable by the SPDS method broadens. Determinate variations in the new parameter depending on the energy position of a localized state in the crystal bandgap were found and explained.