Abstract
The current paper describes the application of acoustic GHz-microscopy in comparison to conventional scanning acoustic microscopy for the investigation of ball bond and metal interfaces of microelectronic devices. The non-destructive ultrasonic inspection method is based on a back-side approach with the ultrasonic pulses applied through the back side of the exposed and thinned Si chip. A direct comparison between the innovative ultra-high frequency setup using special highly focusing acoustic lenses enabling the application of up to 1GHz acoustic frequency and a standard SAM setup based on a conventional 300MHz transducer is presented for several samples. It is demonstrated that the lateral resolution can be drastically increased from 10–15μm for the conventional setup to about 1μm for the ultra-high frequency setup which thereby allows for new applications such as a reliable 2-dimensional quality assessment even of small ball bond interfaces with dimensions of a few 10μm.
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